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A Simple Key For APPLIED NANOSCIENCE Unveiled

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This resulted in the lowered work purpose and the formation of the Schottky Make contact with amongst the BrGO and n-sort Si substrate. Because of the higher proportion of B-C and B-C3 bonding from the BrGO/Si unit than that within the rGO/Si, the reduced Schottky barrier height on the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/

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